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DISCRETE SEMICONDUCTORS
DATA SHEET
BF901; BF901R Silicon n-channel dual gate MOS-FETs
Product specification File under Discrete Semiconductors, SC07 November 1992
Philips Semiconductors
Product specification
Silicon n-channel dual gate MOS-FETs
FEATURES * Intended for low voltage operation * Short channel transistor with high ratio Yfs :Cis * Low noise gain-controlled amplifier to 1 GHz * BF901R has reverse pinning. DESCRIPTION Enhancement type field-effect transistors in plastic microminiature SOT143 and SOT143R envelopes, with source and substrate interconnected. They are intended for UHF and VHF applications, such as television tuners and professional communications equipment especially suited for low voltage operation. These MOS-FET tetrodes are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. PINNING PIN 1 2 3 4 drain gate 2 gate 1 DESCRIPTION source
Marking code: MO1.
BF901; BF901R
QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj Yfs Cig1-s Crs F PARAMETER drain-source voltage drain current total power dissipation junction temperature transfer admittance input capacitance at gate 1 feedback capacitance noise figure at 800 MHz - - - - 28 2.35 25 1.7 TYP. MAX. 12 30 200 150 35 2.75 - - UNIT V mA mW C mS pF fF dB
handbook, halfpage
4
3 g2 g1
d
1
Top view
2 s,b
MAM039
Fig.1 Simplified outline (SOT143) and symbol.
handbook, halfpage
d 4 g2 g1
3
2
Top view
1 s,b
MAM040
Marking code: MO2.
Fig.2 Simplified outline (SOT143R) and symbol.
November 1992
2
Philips Semiconductors
Product specification
Silicon n-channel dual gate MOS-FETs
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VDS VD-G2 ID IG1-S IG2-S Ptot PARAMETER drain-source voltage drain-gate 2 voltage DC drain current gate 1-source current gate 2-source current total power dissipation BF901 BF901R Tstg Tj storage temperature junction temperature CONDITIONS
BF901; BF901R
MIN. - - - - -
MAX. 12 6 30 10 10 200 200 150 150
UNIT V V mA mA mA mW mW C C
up to Tamb = 50 C (note 1) up to Tamb = 40 C (note 1)
- - -65 -
THERMAL RESISTANCE SYMBOL Rth j-a BF901 BF901R Note 1. Device mounted on an FR4 printboard. PARAMETER thermal resistance from junction to ambient (note 1) 500 K/W 550 K/W THERMAL RESISTANCE
MBB756
handbook, halfpage
240
P tot (mW) BF901R 120 BF901
0 0 50 100 150 200 Tamb (C)
Fig.3 Power derating curve.
November 1992
3
Philips Semiconductors
Product specification
Silicon n-channel dual gate MOS-FETs
STATIC CHARACTERISTICS Tj = 25 C. SYMBOL IG1-SS IG2-SS V(BR)G1-SS V(BR)G2-SS VG1-S(th) VG2-S(th) IDSX PARAMETER gate 1 cut-off current gate 2 cut-off current gate 1-source breakdown voltage gate 2-source breakdown voltage gate 1-source threshold voltage gate 2-source threshold voltage drain-source current CONDITIONS VG1-S = 5 V; VG2-S = VDS = 0 VG2-S = 5 V; VG1-S = VDS = 0 IG1-SS = 10 mA; VG2-S = VDS = 0 IG2-SS = 10 mA; VG1-S = VDS = 0 ID = 20 A; VDS = 8 V; VG2-S = 4 V ID = 20 A; VDS = 8 V; VG1-S = 0
BF901; BF901R
MIN. - - 6 6 0 0.3
MAX. 50 50 20 20 0.7 1 18
UNIT nA nA V V V V mA
VDS = 4 V; VG1-S = 1.1 V; VG2-S = 3.4 V 2
DYNAMIC CHARACTERISTICS Measuring conditions (common source): ID = 14 mA; VDS = 5 V; VG2-S = 4 V; Tamb = 25 C. SYMBOL Yfs Cig1-s Cig2-s Cos Crs F PARAMETER transfer admittance input capacitance at gate 1 input capacitance at gate 2 output capacitance feedback capacitance noise figure f = 1 MHz f = 1 MHz f = 1 MHz f = 1 MHz f = 200 MHz; Gs = 2 mS; Bs = Bsopt. f = 800 MHz; Gs = 3.3 mS; Bs = Bsopt. CONDITIONS pulsed; Tj = 25 C MIN. 25 - - - - - - TYP. 28 2.35 1.2 1.4 25 0.7 1.7 MAX. UNIT 35 2.75 - - - - - mS pF pF pF fF dB dB
November 1992
4
Philips Semiconductors
Product specification
Silicon n-channel dual gate MOS-FETs
PACKAGE OUTLINE Plastic surface mounted package; reverse pinning; 4 leads
BF901; BF901R
SOT143R
D
B
E
A
X
y vMA HE
e bp wM B
3
4
Q
A
A1 c
2
b1 e1
1
Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.55 0.25 Q 0.45 0.25 v 0.2 w 0.1 y 0.1
OUTLINE VERSION SOT143R
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-03-10
November 1992
5
Philips Semiconductors
Product specification
Silicon n-channel dual gate MOS-FETs
BF901; BF901R
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y vMA HE
e bp wM B
4
3
Q
A
A1 c
1
b1 e1
2
Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 y 0.1
OUTLINE VERSION SOT143B
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
November 1992
6
Philips Semiconductors
Product specification
Silicon n-channel dual gate MOS-FETs
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values
BF901; BF901R
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
November 1992
7

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